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PD - 94574C
IRF6607
HEXFET ? Power MOSFET
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
V DSS
30V
R DS(on) max
3.3m ? @V GS = 10V
4.4m ? @V GS = 4.5V
Qg(typ.)
50nC
l High Cdv/dt Immunity
l Low Profile (<0.7 mm)
l Dual Sided Cooling Compatible
l Compatible with existing Surface
Mount Techniques
MT
DirectFET ? ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.9,10 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6607 combines the latest HEXFET? Power MOSFET Silicon technology with the advanced DirectFET TM packaging
to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manu-
facturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power
systems, IMPROVING previous best thermal resistance by 80%.
The IRF6607 balances both low resistance and low charge along with ultra low package inductance to reduce both conduc-
tion and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power
the latest generation of processors operating at higher frequencies. The IRF6607 has been optimized for parameters that
are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The
IRF6607 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.
Absolute Maximum Ratings
Parameter
Max.
Units
V DS
V GS
I D @ T C = 25°C
I D @ T A = 25°C
I D @ T A = 70°C
I DM
P D @T A = 25°C
P D @T A = 70°C
P D @T C = 25°C
T J
T STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
30
±12
94
27
22
220
3.6
2.3
42
0.029
-40 to + 150
V
A
W
W/°C
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JA
R θ JA
Junction-to-Ambient
Junction-to-Ambient
–––
12.5
35
–––
R θ JA
R θ JC
R θ J-PCB
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
20
–––
–––
–––
3.0
1.0
°C/W
Notes ? through ? are on page 10
www.irf.com
1
12/22/05
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